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| NZT651 Discrete POWER & Signal Technologies NZT651 C E C B SOT-223 NPN Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4P. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 60 80 5.0 4.0 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max *NZT651 1.2 9.7 103 Units W mW/C C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. (c) 1997 Fairchild Semiconductor Corporation NZT651 NPN Current Driver Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 10 mA, IB = 0 I C = 100 A, I E = 0 I E = 100 A, IC = 0 VCB = 80 V, IE = 0 VEB = 4.0 V, IC = 0 60 80 5.0 100 0.1 V V V nA A ON CHARACTERISTICS* hFE DC Current Gain I C = 50 mA, VCE = 2.0 V I C = 500 mA, VCE = 2.0 V I C = 1.0 A, VCE = 2.0 V I C = 2.0 A, VCE = 2.0 V I C = 1.0 A, IB = 100 mA I C = 2.0 A, IB = 200 mA I C = 1.0 A, IB = 100 mA I C = 1.0 A, VCE = 2.0 V 75 75 75 40 0.3 0.5 1.2 1.0 V V V V VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product I C = 50 mA, VCE = 5.0 V, f = 100 MHz 75 MHz *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% DC Typical Characteristics Typical Pulsed Current Gain vs Collector Current 200 V CE= 5V 150 125 C VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 3 2.5 2 1.5 1 0.5 0 0.01 I C = 10 100 25 C 25 C - 40 C 125 C 50 - 40 C 0 0.01 I C- 0.1 1 COLLECTOR CURRENT (A) 10 0.1 1 - COLLECTOR CURRENT (A) P 4P 10 NZT651 NPN Current Driver Transistor (continued) DC Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current 1 - 40 C (continued) VBE(ON) BASE-EMITTER ON VOLTAGE (V) - V BESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter ON Voltage vs Collector Current 1.4 1.2 1 0.8 0.6 0.4 0.2 0.1 1 I C - COLLECTOR CURRENT (A) P 4P 0.8 25 C 0.6 0.4 0.2 0.01 125 C - 40 C 25 C 125 C = 10 0.1 1 I C - COLLECTOR CURRENT (A) 10 V CE = 5V 10 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 100 VCB = 50V 10 1 0.1 0.01 25 50 75 100 125 TA - AMBIENT TEMPERATURE (C) P 4P 150 AC Typical Characteristics Junction Capacitance vs. Reverse Bias Voltage NZT651 NPN Current Driver Transistor (continued) AC Typical Characteristics (continued) POWER DISSIPATION vs AMBIENT TEMPERATURE 1.2 P D - POWER DISSIPATION (W) 1 0.8 0.6 0.4 0.2 0 SOT-223 0 25 50 75 100 o TEMPERATURE ( C) 125 150 |
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